GS66516B-TR

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Artikelnummer
GS66516B-TR
Hersteller
GaN Systems
Kategorien
MOSFET
RoHS
Datenblatt
Beschreibung
MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling

Spezifikationen

Hersteller
GaN Systems
Kategorien
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
60 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Packaging
Reel
Qg - Gate Charge
14.2 nC
Rds On - Drain-Source Resistance
32 mOhms
Technology
GaN
Tradename
GaNPX
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage
2.6 V

Neueste Rezensionen

everything as it is written in the description of the same deductible prodovtsu deserved

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Decent quality, not минвелл certainly, but enough decent

fast delivery

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