- Artikelnummer
- GS61008P-TR
- Hersteller
- GaN Systems
- Kategorien
- MOSFET
- RoHS
- Datenblatt
- Beschreibung
- MOSFET 100V, 90A, GaN E-mode, GaNPX package, Bottom-side cooled
GS61008P-TR
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- GaN Systems
- Kategorien
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 90 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Packaging
- Reel
- Qg - Gate Charge
- 8 nC
- Rds On - Drain-Source Resistance
- 9.5 mOhms
- Technology
- GaN
- Tradename
- GaNPX
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Vgs - Gate-Source Voltage
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage
- 1.3 V
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Neueste Rezensionen
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Everything is fine!
Jane Doe
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03/14/2023
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