- Artikelnummer
- MTD8600N-T
- Hersteller
- Marktech Optoelectronics
- Kategorien
- Phototransistors
- RoHS
- Datenblatt
- Beschreibung
- Phototransistors Photo Diode 880nm
MTD8600N-T
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- Marktech Optoelectronics
- Kategorien
- Phototransistors
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector-Emitter Breakdown Voltage
- 30 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Dark Current
- 100 nA
- Fall Time
- 10 us
- Maximum On-State Collector Current
- 50 mA
- Maximum Operating Temperature
- + 100 C
- Minimum Operating Temperature
- - 30 C
- Mounting Style
- Through Hole
- Package / Case
- TO-18-2
- Pd - Power Dissipation
- 250 mW
- Peak Wavelength
- 880 nm
- Product
- Phototransistors
- Rise Time
- 10 us
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Neueste Rezensionen
fast delivery, item as described, thanks!!
Sandra Scheck
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Good material. Great seller, efficient and insurance. Ok
Janos More
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MTD8600N-T News
03/14/2023
03/13/2023
03/09/2023
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