Artikelnummer VT6Z1T2R Hersteller ROHM Semiconductor Kategorien Bipolar Transistors - BJT RoHS Datenblatt VT6Z1T2R Beschreibung Bipolar Transistors - BJT NPN/PNP
Hersteller ROHM Semiconductor Kategorien Bipolar Transistors - BJT Collector- Base Voltage VCBO 20 V Collector- Emitter Voltage VCEO Max 20 V Collector-Emitter Saturation Voltage 120 mV Configuration Dual Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 350 MHz, 400 MHz Maximum DC Collector Current 400 mA, - 400 mA Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Package / Case VMT-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 150 mW Series VT6Z1 Transistor Polarity NPN, PNP