- Artikelnummer
- 2N2102 TIN/LEAD
- Hersteller
- Central Semiconductor
- Kategorien
- Bipolar Transistors - BJT
- RoHS
- Datenblatt
- Beschreibung
- Bipolar Transistors - BJT 120Vcbo 80Vcer 65Vceo 7.0Vebo 1.0W
2N2102 TIN/LEAD
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- Central Semiconductor
- Kategorien
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 120 V
- Collector- Emitter Voltage VCEO Max
- 65 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Configuration
- Single
- Emitter- Base Voltage VEBO
- 7 V
- Gain Bandwidth Product fT
- 60 MHz
- Maximum DC Collector Current
- -
- Maximum Operating Temperature
- + 200 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- Through Hole
- Package / Case
- TO-39-3
- Packaging
- Bulk
- Pd - Power Dissipation
- 1 W
- Series
- 2N2102
- Transistor Polarity
- NPN
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Neueste Rezensionen
Takes 8 days to Japan. Good!
Alex Fragkos
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Looks good
Michael Beck
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2N2102 TIN/LEAD News
03/14/2023
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03/09/2023
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