- Artikelnummer
- IKD06N60RATMA1
- Hersteller
- Infineon Technologies
- Kategorien
- IGBT Transistors
- RoHS
- Datenblatt
- Beschreibung
- IGBT Transistors IGBT w/ INTG DIODE 600V 12A
IKD06N60RATMA1
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- Infineon Technologies
- Kategorien
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 12 A
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-252-3
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 100 W
- Series
- Trenchstop RC
- Technology
- SI
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Neueste Rezensionen
it is safe and sound all, thank you seller!
Arturo Madril
Hello! Order received, very happy. Thank you very much!
Flavia
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Everything is excellent! recommend this seller!
Stoyan Chaykov
fast delivery
Mike Ibarra
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