Artikelnummer IKA08N65F5XKSA1 Hersteller Infineon Technologies Kategorien IGBT Transistors RoHS Datenblatt IKA08N65F5XKSA1 Beschreibung IGBT Transistors IGBT PRODUCTS
Hersteller Infineon Technologies Kategorien IGBT Transistors Collector- Emitter Voltage VCEO Max 650 V Collector-Emitter Saturation Voltage 1.6 V Configuration Single Continuous Collector Current at 25 C 10.8 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-220FP-3 Packaging Tube Pd - Power Dissipation 31.2 W Series TRENCHSTOP 5 F5 Technology SI