IKB03N120H2

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Artikelnummer
IKB03N120H2
Hersteller
Infineon Technologies
Kategorien
IGBT Transistors
RoHS
Datenblatt
Beschreibung
IGBT Transistors HIGH SPEED 2 TECH 1200V 3A

Spezifikationen

Hersteller
Infineon Technologies
Kategorien
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Configuration
Single
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Cut Tape, MouseReel, Reel
Series
IKB03N120
Technology
SI

Neueste Rezensionen

Received, Fast shipping, not checked yet

Everything is excellent! recommend this seller!

Seems well have not tested

Looks good

Good material. Great seller, efficient and insurance. Ok

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