Artikelnummer IKB03N120H2 Hersteller Infineon Technologies Kategorien IGBT Transistors RoHS Datenblatt IKB03N120H2 Beschreibung IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
Hersteller Infineon Technologies Kategorien IGBT Transistors Collector- Emitter Voltage VCEO Max 1200 V Configuration Single Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Cut Tape, MouseReel, Reel Series IKB03N120 Technology SI