Artikelnummer IKB20N60H3 Hersteller Infineon Technologies Kategorien IGBT Transistors RoHS Datenblatt IKB20N60H3 Beschreibung IGBT Transistors 600v Hi-Speed SW IGBT
Hersteller Infineon Technologies Kategorien IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.95 V Configuration Single Continuous Collector Current at 25 C 40 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style SMD/SMT Package / Case TO-263-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 170 W Series Trenchstop IGBT3 Technology SI