- Artikelnummer
- SI1050X-T1-GE3
- Hersteller
- Vishay Semiconductors
- Kategorien
- MOSFET
- RoHS
- Datenblatt
- Beschreibung
- MOSFET 8V Vds 5V Vgs SC89-6
SI1050X-T1-GE3
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- Vishay Semiconductors
- Kategorien
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 1.34 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- SC-89-6
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 236 mW
- Qg - Gate Charge
- 7.7 nC
- Rds On - Drain-Source Resistance
- 86 mOhms
- Technology
- SI
- Tradename
- TrenchFET
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 8 V
- Vgs - Gate-Source Voltage
- - 5 V, + 5 V
- Vgs th - Gate-Source Threshold Voltage
- 350 mV
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Neueste Rezensionen
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
packed pretty good, all is ok,-seller.
Julianah Yungkim
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Thank You all fine, packed very well
Ulrich Bundke
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
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SI1050X-T1-GE3 News
03/14/2023
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