Artikelnummer RQ1C065UNTR Hersteller ROHM Semiconductor Kategorien MOSFET RoHS Datenblatt RQ1C065UNTR Beschreibung MOSFET 1.5V Drive Nch MOSFET
Hersteller ROHM Semiconductor Kategorien MOSFET Channel Mode Enhancement Id - Continuous Drain Current 6.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 1.5 W Qg - Gate Charge 11 nC Rds On - Drain-Source Resistance 58 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 10 V, + 10 V Vgs th - Gate-Source Threshold Voltage 300 mV