SI1031R-T1-GE3

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Artikelnummer: SI1031R-T1-GE3

Hersteller: Vishay Semiconductors

Kategorien: MOSFET

RoHS

Datenblatt: SI1031R-T1-GE3

Beschreibung: MOSFET 20V 150mA 280mW 8.0ohm @ 4.5V

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Spezifikationen

Hersteller: Vishay Semiconductors

Kategorien: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Package / Case: SC-75-3

Packaging: Cut Tape, MouseReel, Reel

Pd - Power Dissipation: 280 mW

Qg - Gate Charge: 1.5 nC

Rds On - Drain-Source Resistance: 8 Ohms

Technology: SI

Tradename: TrenchFET

Transistor Polarity: P-Channel

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs - Gate-Source Voltage: - 6 V, + 6 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V

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My package arrived wet, not know where occurs this fact, but working all right

Eddy Hustinx

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Boris Arshinov

Quickly came to CET, all in one package. Look at the rules

Earl Sault

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Kai Hallaren

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Brenda Gfeller

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