Artikelnummer SI1023CX-T1-GE3 Hersteller Vishay Semiconductors Kategorien MOSFET RoHS Datenblatt SI1023CX-T1-GE3 Beschreibung MOSFET -20V Vds 8V Vgs SC89-6
Hersteller Vishay Semiconductors Kategorien MOSFET Channel Mode Enhancement Id - Continuous Drain Current 450 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SC-89-6 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 220 mW Qg - Gate Charge 2.5 nC Rds On - Drain-Source Resistance 756 mOhms Technology SI Tradename TrenchFET Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V