IMW120R220M1HXKSA1

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Artikelnummer: IMW120R220M1HXKSA1

Hersteller: Infineon Technologies

Kategorien: MOSFET

RoHS

Datenblatt: IMW120R220M1HXKSA1

Beschreibung: MOSFET SIC DISCRETE

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Spezifikationen

Hersteller: Infineon Technologies

Kategorien: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 13 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: Through Hole

Number of Channels: 1 Channel

Package / Case: TO-247-3

Packaging: Tube

Pd - Power Dissipation: 75 W

Qg - Gate Charge: 8.5 nC

Rds On - Drain-Source Resistance: 289 mOhms

Technology: SiC

Tradename: CoolSiC

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs - Gate-Source Voltage: - 7 V, + 23 V

Vgs th - Gate-Source Threshold Voltage: 5.7 V

Produktkategorie

Circuit Protection 162,445 Produkte Connectors 2,428,639 Produkte Electromechanical 556,105 Produkte Embedded Solutions 41,129 Produkte Enclosures 20,894 Produkte Engineering Development Tools 42,996 Produkte Industrial Automation 558,346 Produkte LED Lighting 77,795 Produkte Optoelectronics 109,177 Produkte Passive Components 2,996,719 Produkte Power 323,117 Produkte Semiconductors 567,247 Produkte Sensors 70,154 Produkte Test & Measurement 23,394 Produkte

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Teşekkürler

Ashir Hussain

it is safe and sound all, thank you seller!

Arturo Madril

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Brenda Gfeller

Perfectly.

Sensofar Tech, SL

High Quality driver, works excellent. It came to Moscow for 7 days.

Mark Abraham S. Goduco

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