- Artikelnummer
- SI1023X-T1-GE3
- Hersteller
- Vishay Semiconductors
- Kategorien
- MOSFET
- RoHS
- Datenblatt
- Beschreibung
- MOSFET Dual P-Ch MOSFET 20V 1.2 ohms @ 4.5V
SI1023X-T1-GE3
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- Vishay Semiconductors
- Kategorien
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 390 mA
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 2 Channel
- Package / Case
- SOT-563-6
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 280 mW
- Qg - Gate Charge
- 1.5 nC
- Rds On - Drain-Source Resistance
- 1.2 Ohms
- Technology
- SI
- Tradename
- TrenchFET
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Vgs - Gate-Source Voltage
- - 6 V, + 6 V
- Vgs th - Gate-Source Threshold Voltage
- 450 mV
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Neueste Rezensionen
Takes 8 days to Japan. Good!
Alex Fragkos
it is safe and sound all, thank you seller!
Arturo Madril
Perfectly.
Sensofar Tech, SL
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Everything is fine!
Jane Doe
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