- Artikelnummer
- G3R30MT12K
- Hersteller
- GeneSiC Semiconductor
- Kategorien
- MOSFET
- RoHS
- Datenblatt
- Beschreibung
- MOSFET 1200V 30mO TO-247-4 G3R SiC MOSFET
G3R30MT12K
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- GeneSiC Semiconductor
- Kategorien
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 70 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-4
- Packaging
- Tube
- Pd - Power Dissipation
- 281 W
- Qg - Gate Charge
- 118 nC
- Rds On - Drain-Source Resistance
- 30 mOhms
- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Vgs - Gate-Source Voltage
- - 5 V, + 15 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
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Neueste Rezensionen
Empresa muy seria , el envió llego como veis en las fotos de manera muy segura , todos los componentes son de gran calidad , aconsejo TNT frente a DHL como compa?ía para el envió .
Francisco Marin
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
The goods are OK, thank you dealers.
CHARLES SANTOS
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G3R30MT12K News
03/14/2023
03/13/2023
03/09/2023
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