IKB30N65EH5ATMA1

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Artikelnummer: IKB30N65EH5ATMA1

Hersteller: Infineon Technologies

Kategorien: IGBT Transistors

RoHS

Datenblatt: IKB30N65EH5ATMA1

Beschreibung: IGBT Transistors INDUSTRY 14

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Spezifikationen

Hersteller: Infineon Technologies

Kategorien: IGBT Transistors

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.65 V

Configuration: Single

Continuous Collector Current at 25 C: 55 A

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Mounting Style: SMD/SMT

Package / Case: TO-263-3

Packaging: Cut Tape, Reel

Pd - Power Dissipation: 188 W

Series: Trenchstop IGBT5

Technology: SI

Produktkategorie

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fast delivery, item as described, thanks!!

Sandra Scheck

Quick delivery. Secure packing. Excellent product. Thank you

BHADRESH PATEL

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Dane Gogic

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Brenda Gfeller

Thank You all fine, packed very well

Ulrich Bundke

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