- Artikelnummer
- IKB30N65ES5ATMA1
- Hersteller
- Infineon Technologies
- Kategorien
- IGBT Transistors
- RoHS
- Datenblatt
- Beschreibung
- IGBT Transistors INDUSTRY 14
IKB30N65ES5ATMA1
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- Infineon Technologies
- Kategorien
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.35 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 62 A
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- SMD/SMT
- Package / Case
- TO-263-3
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 188 W
- Series
- Trenchstop IGBT5
- Technology
- SI
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Neueste Rezensionen
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Thank You all fine, packed very well
Ulrich Bundke
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
fast delivery
Mike Ibarra
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
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