- Artikelnummer
- IKFW50N60DH3EXKSA1
- Hersteller
- Infineon Technologies
- Kategorien
- IGBT Transistors
- RoHS
- Datenblatt
- Beschreibung
- IGBT Transistors HOME APPLIANCES 14
IKFW50N60DH3EXKSA1
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- Infineon Technologies
- Kategorien
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.2 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 40 A
- Maximum Gate Emitter Voltage
- 30 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 130 W
- Series
- Trenchstop High Speed 3
- Technology
- SI
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Neueste Rezensionen
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Great product. Arrived ahead of time. Thank you
Alexey Petrov
Product as shown in the description, excellent seller, I recommend this seller.
Grahame Maxwell
Product Description. highly recommend.
Dean Smith
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Zuschauer IKFW50N60DH3EXKSA1 kaufte dann
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IKFW50N60DH3EXKSA1 News
03/14/2023
03/13/2023
03/09/2023
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- IKFW50N60DH3EXKSA1 PDF-Datenblatt
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