- Artikelnummer
- IKFW40N60DH3EXKSA1
- Hersteller
- Infineon Technologies
- Kategorien
- IGBT Transistors
- RoHS
- Datenblatt
- Beschreibung
- IGBT Transistors HOME APPLIANCES 14
IKFW40N60DH3EXKSA1
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- Infineon Technologies
- Kategorien
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector-Emitter Saturation Voltage
- 2.3 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 34 A
- Maximum Gate Emitter Voltage
- 30 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 111 W
- Series
- Trenchstop High Speed 3
- Technology
- SI
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Neueste Rezensionen
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Works. Find the price of this product is very good
Maxim Krasnov
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
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Zuschauer IKFW40N60DH3EXKSA1 kaufte dann
Infineon Technologies
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IKFW40N60DH3EXKSA1 News
03/14/2023
03/13/2023
03/09/2023
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