IKD10N60RFATMA1

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Artikelnummer: IKD10N60RFATMA1

Hersteller: Infineon Technologies

Kategorien: IGBT Transistors

RoHS

Datenblatt: IKD10N60RFATMA1

Beschreibung: IGBT Transistors IGBT PRODUCTS

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Spezifikationen

Hersteller: Infineon Technologies

Kategorien: IGBT Transistors

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.2 V

Configuration: Single

Continuous Collector Current at 25 C: 20 A

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Mounting Style: SMD/SMT

Package / Case: TO-252-3

Packaging: Cut Tape, MouseReel, Reel

Pd - Power Dissipation: 150 W

Series: Trenchstop RC

Technology: SI

Produktkategorie

Circuit Protection 162,445 Produkte Connectors 2,428,639 Produkte Electromechanical 556,105 Produkte Embedded Solutions 41,129 Produkte Enclosures 20,894 Produkte Engineering Development Tools 42,996 Produkte Industrial Automation 558,346 Produkte LED Lighting 77,795 Produkte Optoelectronics 109,177 Produkte Passive Components 2,996,719 Produkte Power 323,117 Produkte Semiconductors 567,247 Produkte Sensors 70,154 Produkte Test & Measurement 23,394 Produkte

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Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Kai Hallaren

Hello! Order received, very happy. Thank you very much!

Flavia

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Dane Gogic

Shipping a little 1 weeks, normal packing, the procedure is complete.

dennis kraft

Received very good

Jakub Tyburski

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