- Artikelnummer
- IKA08N65H5
- Hersteller
- Infineon Technologies
- Kategorien
- IGBT Transistors
- RoHS
- Datenblatt
- Beschreibung
- IGBT Transistors IGBT PRODUCTS
IKA08N65H5
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- Infineon Technologies
- Kategorien
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 10.8 A
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 40 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3 FP
- Packaging
- Tube
- Pd - Power Dissipation
- 31.2 W
- Series
- Trenchstop 5 H5
- Technology
- SI
Produktkategorie
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Neueste Rezensionen
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Takes 8 days to Japan. Good!
Alex Fragkos
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
The goods are OK, thank you dealers.
CHARLES SANTOS
Great product. Arrived ahead of time. Thank you
Alexey Petrov
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03/14/2023
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