Artikelnummer RQ1E070RPTR Hersteller ROHM Semiconductor Kategorien MOSFET RoHS Datenblatt RQ1E070RPTR Beschreibung MOSFET MID PWR MOSFET SER
Hersteller ROHM Semiconductor Kategorien MOSFET Channel Mode Enhancement Id - Continuous Drain Current 7 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSMT-8 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 1.5 W Qg - Gate Charge 50 nC Rds On - Drain-Source Resistance 12 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V