- Artikelnummer
- RQ3E080GNTB
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- RoHS
- Datenblatt
- Beschreibung
- MOSFET 4.5V Drive Nch MOSFET
RQ3E080GNTB
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 8 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 5.8 nC
- Rds On - Drain-Source Resistance
- 16.7 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Neueste Rezensionen
packed pretty good, all is ok,-seller.
Julianah Yungkim
fast delivery
Mike Ibarra
The goods are OK, thank you dealers.
CHARLES SANTOS
Everything is fine!
Jane Doe
Seems well have not tested
Hazel Gooby
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RQ3E080GNTB News
03/14/2023
03/13/2023
03/09/2023
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