- Artikelnummer
- RQ3E070BNTB
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- RoHS
- Datenblatt
- Beschreibung
- MOSFET 4.5V Drive Nch MOSFET
RQ3E070BNTB
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 7 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 8.9 nC
- Rds On - Drain-Source Resistance
- 20 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Neueste Rezensionen
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Works. Find the price of this product is very good
Maxim Krasnov
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
fast delivery
Mike Ibarra
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RQ3E070BNTB News
03/14/2023
03/13/2023
03/09/2023
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