Artikelnummer RQ3L070ATTB Hersteller ROHM Semiconductor Kategorien MOSFET RoHS Datenblatt RQ3L070ATTB Beschreibung MOSFET Pch -60V -25A, HSMT8, Power MOSFET. RQ3L070AT is a power MOSFET, suitable for load switching applications.
Hersteller ROHM Semiconductor Kategorien MOSFET Channel Mode Enhancement Id - Continuous Drain Current 25 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case HSMT-8 Packaging Cut Tape, Reel Pd - Power Dissipation 20 W Qg - Gate Charge 48 nC Rds On - Drain-Source Resistance 28 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V