Artikelnummer IKFW60N60DH3EXKSA1 Hersteller Infineon Technologies Kategorien IGBT Transistors RoHS Datenblatt IKFW60N60DH3EXKSA1 Beschreibung IGBT Transistors HOME APPLIANCES 14
Hersteller Infineon Technologies Kategorien IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2.2 V Configuration Single Continuous Collector Current at 25 C 53 A Maximum Gate Emitter Voltage 30 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO247-3 Packaging Tube Pd - Power Dissipation 141 W Series Trenchstop High Speed 3 Technology SI