Artikelnummer IKFW60N60EH3XKSA1 Hersteller Infineon Technologies Kategorien IGBT Transistors RoHS Datenblatt IKFW60N60EH3XKSA1 Beschreibung IGBT Transistors INDUSTRY 14
Hersteller Infineon Technologies Kategorien IGBT Transistors Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 1.85 V Configuration Single Continuous Collector Current at 25 C 63 A Maximum Gate Emitter Voltage 20 V Maximum Operating Temperature + 175 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 164 W Series Trenchstop High Speed 3 Technology SI