IKFW50N60DH3XKSA1

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Artikelnummer: IKFW50N60DH3XKSA1

Hersteller: Infineon Technologies

Kategorien: IGBT Transistors

RoHS

Datenblatt: IKFW50N60DH3XKSA1

Beschreibung: IGBT Transistors INDUSTRY 14

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Spezifikationen

Hersteller: Infineon Technologies

Kategorien: IGBT Transistors

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.85 V

Configuration: Single

Continuous Collector Current at 25 C: 53 A

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Mounting Style: Through Hole

Package / Case: TO247-3

Packaging: Tube

Pd - Power Dissipation: 145 W

Series: Trenchstop High Speed 3

Technology: SI

Produktkategorie

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My package arrived wet, not know where occurs this fact, but working all right

Eddy Hustinx

all exactly and work. радиолюбителя useful set to, thank you)

Mahmoud Shendy

it is safe and sound all, thank you seller!

Arturo Madril

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Dane Gogic

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Sergio Garcia Carreon

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