- Artikelnummer
- RQ3E120GNTB
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- RoHS
- Datenblatt
- Beschreibung
- MOSFET 4.5V Drive Nch MOSFET
RQ3E120GNTB
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 12 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 10 nC
- Rds On - Drain-Source Resistance
- 8.8 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Neueste Rezensionen
Everything as it is written in the description of the same deductible prodovtsu deserved 5
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Flavia
Works. Recommend
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Alex Yu
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RQ3E120GNTB News
03/14/2023
03/13/2023
03/09/2023
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