- Artikelnummer
- RQ3E100BNTB
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- RoHS
- Datenblatt
- Beschreibung
- MOSFET 4.5V Drive Nch MOSFET
RQ3E100BNTB
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 13.5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 15 W
- Qg - Gate Charge
- 22 nC
- Rds On - Drain-Source Resistance
- 7.7 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Neueste Rezensionen
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Everything is excellent! recommend this seller!
Stoyan Chaykov
The goods are OK, thank you dealers.
CHARLES SANTOS
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
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RQ3E100BNTB News
03/14/2023
03/13/2023
03/09/2023
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