- Artikelnummer
- RQ3E100ATTB
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- RoHS
- Datenblatt
- Beschreibung
- MOSFET -30V P-CHANNEL -31A
RQ3E100ATTB
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 31 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 17 W
- Qg - Gate Charge
- 42 nC
- Rds On - Drain-Source Resistance
- 11.4 mOhms
- Technology
- SI
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Neueste Rezensionen
Yes, they are all here. :)
sudheer kumar sirra
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
The goods are OK, thank you dealers.
CHARLES SANTOS
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
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RQ3E100ATTB News
03/14/2023
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