RQ3E150GNTB

Bilder dienen nur als Referenz
Artikelnummer
RQ3E150GNTB
Hersteller
ROHM Semiconductor
Kategorien
MOSFET
RoHS
Datenblatt
Beschreibung
MOSFET 4.5V Drive Nch MOSFET

Spezifikationen

Hersteller
ROHM Semiconductor
Kategorien
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
15 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Cut Tape, MouseReel, Reel
Pd - Power Dissipation
2 W
Qg - Gate Charge
15.3 nC
Rds On - Drain-Source Resistance
6.1 mOhms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Neueste Rezensionen

Decent quality, not минвелл certainly, but enough decent

all is well. checked work. seller recommend.

receiver the timers in good condition with No bent legs due too the good package. However i haven teste Them All but they seem to have No disaffects.

to seller thank you! all like the photo. not tried operation. seller store recommend.

All very good. AND packed as you have everything in good condition.

Sie können auch mögen

Zuschauer RQ3E150GNTB kaufte dann

Zugehörige Schlüsselwörter für RQ3E

  • RQ3E150GNTB Integriert
  • RQ3E150GNTB RoHS
  • RQ3E150GNTB PDF-Datenblatt
  • RQ3E150GNTB Datenblatt
  • RQ3E150GNTB Teil
  • RQ3E150GNTB Kaufen
  • RQ3E150GNTB Verteiler
  • RQ3E150GNTB PDF
  • RQ3E150GNTB Komponente
  • RQ3E150GNTB ICs
  • RQ3E150GNTB PDF Herunterladen
  • RQ3E150GNTB Datenblatt herunterladen
  • RQ3E150GNTB Liefern
  • RQ3E150GNTB Lieferant
  • RQ3E150GNTB Preis
  • RQ3E150GNTB Datenblatt
  • RQ3E150GNTB Bild
  • RQ3E150GNTB Bild
  • RQ3E150GNTB Inventar
  • RQ3E150GNTB Stock
  • RQ3E150GNTB Original
  • RQ3E150GNTB Am billigsten
  • RQ3E150GNTB Ausgezeichnet
  • RQ3E150GNTB Bleifrei
  • RQ3E150GNTB Spezifikation
  • RQ3E150GNTB Heiße Angebote
  • RQ3E150GNTB Preis brechen
  • RQ3E150GNTB Technische Daten