- Artikelnummer
- RQ3E130BNTB
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- RoHS
- Datenblatt
- Beschreibung
- MOSFET 4.5V Drive Nch MOSFET
RQ3E130BNTB
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 13 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 36 nC
- Rds On - Drain-Source Resistance
- 4.4 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Neueste Rezensionen
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
Seems well have not tested
Hazel Gooby
Good material. Great seller, efficient and insurance. Ok
Janos More
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
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RQ3E130BNTB News
03/14/2023
03/13/2023
03/09/2023
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