- Artikelnummer
- RQ3E130MNTB1
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- RoHS
- Datenblatt
- Beschreibung
- MOSFET 4.5V Drive Nch MOSFET
RQ3E130MNTB1
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 13 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- -
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 2 W
- Qg - Gate Charge
- 14 nC
- Rds On - Drain-Source Resistance
- 5.8 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
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Neueste Rezensionen
Thanks for your feedback!
Anna Grden
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Long Service and Russia!
Alex Yu
Packed medium, in transit could поврелиться. But since it's safe, work perfectly
Matt Hookway
No problem, with no contact, selectively checked a few pieces, such as running
Nic Ford
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RQ3E130MNTB1 News
03/14/2023
03/13/2023
03/09/2023
Zugehörige Schlüsselwörter für RQ3E
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