- Artikelnummer
- RQ3E180BNTB
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- RoHS
- Datenblatt
- Beschreibung
- MOSFET 4.5V Drive Nch MOSFET
RQ3E180BNTB
Bilder dienen nur als Referenz
Spezifikationen
- Hersteller
- ROHM Semiconductor
- Kategorien
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 39 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- HSMT-8
- Packaging
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation
- 20 W
- Qg - Gate Charge
- 72 nC
- Rds On - Drain-Source Resistance
- 2.8 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Neueste Rezensionen
Hello! Order received, very happy. Thank you very much!
Flavia
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
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RQ3E180BNTB News
03/14/2023
03/13/2023
03/09/2023
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